| PART |
Description |
Maker |
| MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172- |
High Power Diode Modules 大功率二极管模块
High Power Diode Modules 190 A, 1600 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 800 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 1800 V, SILICON, RECTIFIER DIODE
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS Corporation
|
| SIB452DK |
N-Channel 190-V (D-S) MOSFET
|
Vishay Siliconix
|
| MAPPST2933-190M |
RADAR PULSED POWER PALLET 190 Watts, 2.9 ? 3.3 GHz 200us Pulse, 10% Duty
RADAR PULSED POWER PALLET 190 Watts, 2.9 - 3.3 GHz 200us Pulse, 10% Duty
|
Tyco Electronics
|
| B82726S3543N040 |
1 ELEMENT, 190 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Power line chokes
|
EPCOS AG
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
| 855625 |
190 MHz Bandpass Filter
|
TRIQUINT[TriQuint Semiconductor]
|
| SSA230 SSA330 |
SOLID STATE ARRESTER (190 . 400 VOLTS)
|
Frontier Electronics.
|
| B39191-B7305-A810 B7305 |
SAW Components IF Filter for Mobile Communication 190 MHz
|
EPCOS[EPCOS]
|
| PCKV857DGG-T PCKV857DGV-T PCKV857EV |
PCKV857; 70-190 MHz differential 1:10 clock driver
|
Philips
NXP Semiconductors N.V.
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
Power Factor Correction Modules: MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| 533-3743 |
Coil Form, Shielded, Vertical, .190 (4,83) Winding Diameter
|
CAMBION Electronic Components
|
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